MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIR410DP-T1-GE3-VB
N-Channel 30V 160A 90W Surface Mount DFN5x6-8
DFN5x6-8RoHSActive
MOSFET N-CH 30V 160A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIR410DP-T1-GE3-VB
- Store part #
- C20626289
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C20626289
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹157.62 | ₹157.62 |
| 10+ | ₹129.97 | ₹1,299.70 |
| 30+ | ₹116.04 | ₹3,481.20 |
| 100+ | ₹102.32 | ₹10,232.00 |
| 500+ | ₹84.25 | ₹42,125.00 |
| 1,000+ | ₹80.12 | ₹80,120.00 |
1 × ₹157.62
₹157.62
excl. GST
₹185.99 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR410DP-T1-GE3-VB
₹157.62 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 1.725nF
- Current - Continuous Drain(Id)
- 160A
- Ciss-Input Capacitance
- 9.9nF
- Pd - Power Dissipation
- 90W
- Reverse Transfer Capacitance (Crss)
- 970pF
- RDS(on)
- 2.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 82nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.25 g
Overview
Applications
- OR gate function
- Server
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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