MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIR416DP-T1-GE3-VB
N-Channel 40V 120A 83W Surface Mount DFN5x6-8
DFN5x6-8RoHSActive
MOSFET N-CH 40V 120A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIR416DP-T1-GE3-VB
- Store part #
- C20417613
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C20417613
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹203.37 | ₹203.37 |
| 10+ | ₹169.81 | ₹1,698.10 |
| 30+ | ₹151.31 | ₹4,539.30 |
| 100+ | ₹130.28 | ₹13,028.00 |
| 500+ | ₹120.92 | ₹60,460.00 |
| 1,000+ | ₹116.68 | ₹1,16,680.00 |
1 × ₹203.37
₹203.37
excl. GST
₹239.98 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR416DP-T1-GE3-VB
₹203.37 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 40V
- Output Capacitance(Coss)
- 610pF
- Current - Continuous Drain(Id)
- 120A
- Ciss-Input Capacitance
- 4.75nF
- Pd - Power Dissipation
- 83W
- Reverse Transfer Capacitance (Crss)
- 275pF
- RDS(on)
- 2.8mΩ@6.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 57nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.14 g
Overview
Applications
- Synchronous Rectification – Secondary-Side DC/DC
Key features
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- 100% UIS tested
- RoHS compliant
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Similar parts — check the datasheet before substituting.
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