MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIR418DP-T1-GE3-VB
N-Channel 40V 70A 6.15W Surface Mount DFN5x6-8
DFN5x6-8ROHS CompliantActive
MOSFET N-CH 40V 70A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIR418DP-T1-GE3-VB
- Store part #
- C7568846
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
51 in stock
#C7568846
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹155.88 | ₹155.88 |
| 10+ | ₹131.06 | ₹1,310.60 |
| 30+ | ₹118.65 | ₹3,559.50 |
| 100+ | ₹106.24 | ₹10,624.00 |
| 500+ | ₹75.98 | ₹37,990.00 |
| 1,000+ | ₹72.28 | ₹72,280.00 |
1 × ₹155.88
₹155.88
excl. GST
₹183.94 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR418DP-T1-GE3-VB
₹155.88 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 40V
- Output Capacitance(Coss)
- 975pF
- Current - Continuous Drain(Id)
- 70A
- Ciss-Input Capacitance
- 1.195nF
- Pd - Power Dissipation
- 6.15W
- Reverse Transfer Capacitance (Crss)
- 670pF
- RDS(on)
- 4.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 67nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.245 g
Overview
Applications
- Notebook core
- Voltage Regulator Module (VRM)/Point of Load (POL)
Key features
- Trench power MOSFET
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Alternatives
Similar parts — check the datasheet before substituting.
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