MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIR662DP-T1-GE3-VB
N-Channel 60V 100A 136W Surface Mount DFN5x6-8
DFN5x6-8ROHS CompliantActive
MOSFET N-CH 60V 100A DFN5x6-8
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIR662DP-T1-GE3-VB
- Store part #
- C7525096
- Package / case
- DFN5x6-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
41 in stock
#C7525096
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹255.87 | ₹255.87 |
| 10+ | ₹218.26 | ₹2,182.60 |
| 30+ | ₹194.67 | ₹5,840.10 |
| 100+ | ₹170.65 | ₹17,065.00 |
| 500+ | ₹159.61 | ₹79,805.00 |
| 1,000+ | ₹154.92 | ₹1,54,920.00 |
1 × ₹255.87
₹255.87
excl. GST
₹301.93 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR662DP-T1-GE3-VB
₹255.87 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Output Capacitance(Coss)
- 470pF
- Current - Continuous Drain(Id)
- 100A
- Ciss-Input Capacitance
- 2.65nF
- Pd - Power Dissipation
- 136W
- Reverse Transfer Capacitance (Crss)
- 225pF
- RDS(on)
- 3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 47nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.172 g
Overview
Key features
- Junction temperature 175°C
- Trench power MOSFET
- Material classification: RoHS compliant
Alternatives
Similar parts — check the datasheet before substituting.
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