MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SIR681DP-T1-RE3
P-Channel 80V 71.9A 104W Surface Mount PowerPAKSO-8
PowerPAKSO-8ROHS CompliantActive
MOSFET P-CH 80V 71.9A PowerPAKSO-8
- Manufacturer
- VISHAY
- Manufacturer part #
- SIR681DP-T1-RE3
- Store part #
- C2930964
- Package / case
- PowerPAKSO-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
3,092 in stock
#C2930964
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹518.84 | ₹518.84 |
| 10+ | ₹439.71 | ₹4,397.10 |
| 30+ | ₹392.65 | ₹11,779.50 |
| 100+ | ₹344.96 | ₹34,496.00 |
| 500+ | ₹323.06 | ₹1,61,530.00 |
| 1,000+ | ₹313.30 | ₹3,13,300.00 |
1 × ₹518.84
₹518.84
excl. GST
₹612.23 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
SIR681DP-T1-RE3
₹518.84 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.48nF
- Ciss-Input Capacitance
- 4.85nF
- Pd - Power Dissipation
- 104W
- Drain to Source Voltage
- 80V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 71.9A
- Reverse Transfer Capacitance (Crss)
- 47pF
- RDS(on)
- 16.7mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 31.7nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.6V
- Type
- P-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.39 g
Overview
Applications
- Adapter and charger switch
- Battery and circuit protection
- OR-ing
- Load switch
- Motor drive control
Key features
- TrenchFET Gen IV p-channel power MOSFET
- Very low Rps(on) minimizes voltage drop and reduces conduction loss
- RoHS COMPLIANT
- Eliminates the need for charge pump
- 100 % Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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