MDD(Microdiode Semiconductor)
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HXY MOSFETDatasheet (PDF)
SIR882ADP-T1-GE3-HXY
97W 100V 75A 7.3mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs
DFN-8L(5x6)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIR882ADP-T1-GE3-HXY
- Store part #
- C53262892
- Package / case
- DFN-8L(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
198 in stock
#C53262892
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹156.38 | ₹156.38 |
| 10+ | ₹130.14 | ₹1,301.40 |
| 30+ | ₹115.87 | ₹3,476.10 |
| 100+ | ₹99.71 | ₹9,971.00 |
| 500+ | ₹92.36 | ₹46,180.00 |
| 1,000+ | ₹89.21 | ₹89,210.00 |
1 × ₹156.38
₹156.38
excl. GST
₹184.53 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIR882ADP-T1-GE3-HXY
₹156.38 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 865pF
- Ciss-Input Capacitance
- 2.046nF
- Pd - Power Dissipation
- 97W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 75A
- Reverse Transfer Capacitance (Crss)
- 25pF
- RDS(on)
- 7.3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 39.4nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.126 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | DMTH10H009SPS-13-HXY#C53262926HXY MOSFET · DFN-8L(5x6) | HXY MOSFET | DFN-8L(5x6) | 98 | ₹111.69 · 98 in stock | View |
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