MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SIRA80DP-T1-RE3-VB
N-Channel 30V 128A 250W Surface Mount DFN-8(5x6)
DFN-8(5x6)RoHSActive
MOSFET N-CH 30V 128A DFN-8(5x6)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SIRA80DP-T1-RE3-VB
- Store part #
- C45662516
- Package / case
- DFN-8(5x6)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
8 in stock
#C45662516
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹232.94 | ₹232.94 |
| 10+ | ₹198.33 | ₹1,983.30 |
| 30+ | ₹179.39 | ₹5,381.70 |
| 100+ | ₹158.05 | ₹15,805.00 |
| 500+ | ₹124.31 | ₹62,155.00 |
| 1,000+ | ₹120.17 | ₹1,20,170.00 |
1 × ₹232.94
₹232.94
excl. GST
₹274.87 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIRA80DP-T1-RE3-VB
₹232.94 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 1.225nF
- Current - Continuous Drain(Id)
- 128A
- Ciss-Input Capacitance
- 6.265nF
- Pd - Power Dissipation
- 250W
- RDS(on)
- 1.5mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 81.5nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.15 g
Overview
Applications
- OR gate applications
- Servers
Key features
- Trench power MOSFET
- 100% Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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