MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SIS184LDN-T1-GE3
60V 5.4mΩ@10V 1 N-channel PowerPAK1212-8 Single FETs, MOSFETs RoHS
PowerPAK1212-8ROHS3 CompliantActive
MOSFET N-CH 60V 69.4A
- Manufacturer
- VISHAY
- Manufacturer part #
- SIS184LDN-T1-GE3
- Store part #
- C7080574
- Package / case
- PowerPAK1212-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
35 in stock
#C7080574
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹238.17 | ₹238.17 |
| 10+ | ₹201.44 | ₹2,014.40 |
| 30+ | ₹178.41 | ₹5,352.30 |
| 100+ | ₹154.94 | ₹15,494.00 |
| 500+ | ₹144.29 | ₹72,145.00 |
| 1,000+ | ₹139.72 | ₹1,39,720.00 |
1 × ₹238.17
₹238.17
excl. GST
₹281.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SIS184LDN-T1-GE3
₹238.17 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 18.7A;69.4A
- Ciss-Input Capacitance
- 1.95nF
- Pd - Power Dissipation
- 3.7W;52W
- Reverse Transfer Capacitance (Crss)
- 41pF
- RDS(on)
- 5.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 41nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.295 g
Overview
Power MOS 8T™ is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other circuits. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio provide excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching, achieving low EMI and reliable paralleling even at very high switching frequencies.
Applications
- Synchronous rectification
- Primary-side switching
- DC/DC converters
- Motor drive switching
- Battery and load switches
- Industrial applications
Key features
- 4th generation TrenchFET power MOSFET
- Ultra-low RDS(on)-gate charge FOM
- Optimized for minimum RDS(on)-output capacitance FOM
- 100% tested for gate resistance and unclamped inductive switching
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | DMT6007LFGQ-13#C6540300DIODES · PowerDI3333-8 | DIODES | PowerDI3333-8 | 24 | ₹367.34 · 24 in stock | View |
 | DMT64M8LCG-7#C5673653DIODES · V-DFN3333-8 | DIODES | V-DFN3333-8 | 14 | ₹352.49 · 14 in stock | View |
 | DMT6007LFGQ-7#C5624212DIODES · PowerDI3333-8 | DIODES | PowerDI3333-8 | 1,052 | ₹76.58 · 1,052 in stock | View |
 | SISS26LDN-T1-GE3#C7011130VISHAY · PowerPAK1212-8S | VISHAY | PowerPAK1212-8S | 21 | ₹198.83 · 21 in stock | View |
 | XRS100N06LD#C42457038XNRUSEMI · PDFN-8L(3.3x3.3) | XNRUSEMI | PDFN-8L(3.3x3.3) | 5,165 | ₹43.75 · 5,165 in stock | View |
Same category
