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HXY MOSFETDatasheet (PDF)
SIS427EDN-T1-GE3-HXY
30V 55A 21.5W 8.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SIS427EDN-T1-GE3-HXY
- Store part #
- C54582640
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
46 in stock
#C54582640
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹67.06 | ₹67.06 |
| 10+ | ₹53.74 | ₹537.40 |
| 30+ | ₹47.93 | ₹1,437.90 |
| 100+ | ₹40.84 | ₹4,084.00 |
| 500+ | ₹33.75 | ₹16,875.00 |
| 1,000+ | ₹31.82 | ₹31,820.00 |
1 × ₹67.06
₹67.06
excl. GST
₹79.13 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SIS427EDN-T1-GE3-HXY
₹67.06 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Output Capacitance(Coss)
- 346pF
- Current - Continuous Drain(Id)
- 55A
- Ciss-Input Capacitance
- 2.8nF
- Pd - Power Dissipation
- 21.5W
- Reverse Transfer Capacitance (Crss)
- 319pF
- RDS(on)
- 8.5mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 30nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.09 g
Overview
The SIS427EDN-T1-GE3 employs advanced trench technology to deliver excellent on-resistance, low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Key features
- VDS = -30V, ID = -55A
- RDS(ON) < 11mΩ (@ VGS = -10V)
Alternatives
Similar parts — check the datasheet before substituting.
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