MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SISA10BDN-T1-GE3-HXY
31.7W 30V 100A 2.5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SISA10BDN-T1-GE3-HXY
- Store part #
- C53263055
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
63 in stock
#C53263055
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹98.96 | ₹98.96 |
| 10+ | ₹80.81 | ₹808.10 |
| 30+ | ₹71.52 | ₹2,145.60 |
| 100+ | ₹62.45 | ₹6,245.00 |
| 500+ | ₹57.05 | ₹28,525.00 |
| 1,000+ | ₹54.24 | ₹54,240.00 |
1 × ₹98.96
₹98.96
excl. GST
₹116.77 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISA10BDN-T1-GE3-HXY
₹98.96 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 499pF
- Ciss-Input Capacitance
- 3.499nF
- Pd - Power Dissipation
- 31.7W
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 100A
- Reverse Transfer Capacitance (Crss)
- 430pF
- RDS(on)
- 2.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.071 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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