MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SISA18BDN-T1-GE3-HXY
30W 30V 40A 5mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SISA18BDN-T1-GE3-HXY
- Store part #
- C53263051
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
98 in stock
#C53263051
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹72.38 | ₹72.38 |
| 10+ | ₹57.99 | ₹579.90 |
| 30+ | ₹51.77 | ₹1,553.10 |
| 100+ | ₹44.25 | ₹4,425.00 |
| 500+ | ₹40.81 | ₹20,405.00 |
| 1,000+ | ₹38.66 | ₹38,660.00 |
1 × ₹72.38
₹72.38
excl. GST
₹85.41 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
SISA18BDN-T1-GE3-HXY
₹72.38 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 498pF
- Ciss-Input Capacitance
- 814pF
- Pd - Power Dissipation
- 30W
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 40A
- Reverse Transfer Capacitance (Crss)
- 41pF
- RDS(on)
- 5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 8nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.073 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | CSD17552Q3A-HXY#C53263012HXY MOSFET · DFN-8L(3x3) | HXY MOSFET | DFN-8L(3x3) | 96 | ₹76.23 · 96 in stock | View |
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