MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SISS02DN-T1-GE3
N-Channel 25V 51A 80A 5W 65.7W Surface Mount PowerPAK1212-8S
PowerPAK1212-8SROHS3 CompliantActive
MOSFET N-CH 25V 51A 80A PowerPAK1212-8S
- Manufacturer
- VISHAY
- Manufacturer part #
- SISS02DN-T1-GE3
- Store part #
- C6816952
- Package / case
- PowerPAK1212-8S
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
1,993 in stock
#C6816952
Stock & price checked 12 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹110.21 | ₹110.21 |
| 10+ | ₹98.91 | ₹989.10 |
| 30+ | ₹92.94 | ₹2,788.20 |
| 100+ | ₹85.90 | ₹8,590.00 |
| 500+ | ₹82.93 | ₹41,465.00 |
| 1,000+ | ₹81.43 | ₹81,430.00 |
1 × ₹110.21
₹110.21
excl. GST
₹130.05 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SISS02DN-T1-GE3
₹110.21 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 25V
- Current - Continuous Drain(Id)
- 51A;80A
- Ciss-Input Capacitance
- 4.45nF
- Pd - Power Dissipation
- 5W;65.7W
- Reverse Transfer Capacitance (Crss)
- 206pF
- RDS(on)
- 1.2mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 83nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.2V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.239 g
Overview
- 4th generation trench MOSFET power device - Ultra-low on-resistance RDS(on) in a compact, enhanced thermal dissipation package - Optimized gate charge Qg, gate-drain charge Qgd, and Qgd/Qgs ratio for reduced switching-related power losses - 100% tested for gate resistance Rg and unclamped inductive switching (UIS)
Applications
- Synchronous rectification
- Synchronous buck converter
- High power density DC/DC
- OR-ing
- Load switching
Key features
- TrenchFET Gen IV power MOSFET
- Very low RDS(on) in a compact and thermally enhanced RoHS compliant package
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
- 100 % Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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