MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VISHAYDatasheet (PDF)
SISS46DN-T1-GE3
100V 45.3A 65.7W 14.6mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS
PowerPAK1212-8SROHS3 CompliantActive
N-Channel, Current: 45.3A, Voltage: 100V
- Manufacturer
- VISHAY
- Manufacturer part #
- SISS46DN-T1-GE3
- Store part #
- C3279454
- Package / case
- PowerPAK1212-8S
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C3279454
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹292.54 | ₹292.54 |
| 10+ | ₹288.67 | ₹2,886.70 |
| 30+ | ₹285.87 | ₹8,576.10 |
| 100+ | ₹283.29 | ₹28,329.00 |
1 × ₹292.54
₹292.54
excl. GST
₹345.20 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SISS46DN-T1-GE3
₹292.54 for 1 + GST
Specifications
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 45.3A
- Ciss-Input Capacitance
- 2.14nF
- Pd - Power Dissipation
- 65.7W
- RDS(on)
- 14.6mΩ@7.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 42nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3.4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.107 g
Overview
This device is designed to improve the efficiency of DC/DC converters. Using advanced MOSFET fabrication technology, the individual components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and ultra-low Miller charge enable excellent performance in both adaptive and fixed dead-time gate drive circuits. An extremely low drain-source on-resistance (rDS(on)) is maintained, making this a highly versatile device.
Applications
- Synchronous Rectification
- Primary-Side Switching
- DC/DC Converter
- Solar Micro-Inverter
- Motor Drive Switching
- Battery and Load Switching
- Industrial Applications
Key features
- TrenchFET® 4th Generation Power MOSFET
- Ultra-low RDS - Qg figure of merit (FOM)
- Optimized for lowest RDS - Qoss FOM
- 100% Rg and UIS tested
Alternatives
Similar parts — check the datasheet before substituting.
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