Varnitronics
SISS5108DN-T1-GE3 VISHAY
VISHAY

SISS5108DN-T1-GE3

100V 55.9A 20W 12.4mΩ@7.5V 1 N-channel N-Channel PowerPAK1212-8S Single FETs, MOSFETs RoHS

PowerPAK1212-8SROHS CompliantActive

MOSFET N-CH 100V 55.9A PowerPAK1212-8S

Manufacturer
VISHAY
Manufacturer part #
SISS5108DN-T1-GE3
Store part #
C20346156
Package / case
PowerPAK1212-8S
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

6 in stock

#C20346156

Stock & price checked 2 days ago

QuantityUnit pricePack price
1+₹202.31₹202.31
10+₹198.40₹1,984.00
30+₹195.79₹5,873.70
100+₹164.71₹16,471.00

1 × ₹202.31

₹202.31

excl. GST

₹238.73 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

SISS5108DN-T1-GE3

₹202.31 for 1 + GST

Need this with the rest of your board? Upload the BOM — we price every line.Upload BOM

Specifications

Drain to Source Voltage
100V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
55.9A
Pd - Power Dissipation
20W
RDS(on)
12.4mΩ@7.5V
Number
1 N-channel
Gate Charge(Qg)
23nC@10V
Gate Threshold Voltage (Vgs(th))
4V
Type
N-Channel

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.181 g

Overview

Applications

  • Synchronous Rectification - Primary-Side Switch - DC/DC Converter - Power Supply - Motor Drive Control

Key features

  • TrenchFET 5th generation power MOSFET
  • Ultra-low RDS × Qg figure of merit (FOM)
  • Optimized for lowest RDS × Qoss figure of merit
  • 100% tested for avalanche ruggedness (Rq) and unclamped inductive switching (UIS)

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