MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
HXY MOSFETDatasheet (PDF)
SM4286T9RL-HXY
N-Channel 100V 20A 34.7W Surface Mount TO-252-2L
TO-252-2LRoHSActive
MOSFET N-CH 100V 20A TO-252-2L
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SM4286T9RL-HXY
- Store part #
- C6285781
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,140 in stock
#C6285781
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹17.86 | ₹89.30 |
| 50+ | ₹14.10 | ₹705.00 |
| 150+ | ₹12.22 | ₹1,833.00 |
| 500+ | ₹10.81 | ₹5,405.00 |
| 2,500+ | ₹9.68 | ₹24,200.00 |
| 5,000+ | ₹9.13 | ₹45,650.00 |
5 × ₹17.86
₹89.30
excl. GST
₹105.37 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
SM4286T9RL-HXY
₹89.30 for 5 + GST
Specifications
- Configuration
- Standalone
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 60pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 1.535nF
- Pd - Power Dissipation
- 34.7W
- Reverse Transfer Capacitance (Crss)
- 37pF
- RDS(on)
- 80mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 26.2nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.445 g
Overview
The SM4286T9RL utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Key features
- Drain-source voltage V<sub>DS</sub> = 100V, drain current I<sub>D</sub> = 20A
- On-resistance R<sub>DS(ON)</sub> < 87mΩ at gate-source voltage V<sub>GS</sub> = 10V
Alternatives
Similar parts — check the datasheet before substituting.
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