MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
SPP21N10-VB
N-Channel 100V 18A 105W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 100V 18A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- SPP21N10-VB
- Store part #
- C22388997
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C22388997
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹72.47 | ₹72.47 |
| 10+ | ₹56.93 | ₹569.30 |
| 50+ | ₹50.42 | ₹2,521.00 |
| 100+ | ₹42.02 | ₹4,202.00 |
| 500+ | ₹38.23 | ₹19,115.00 |
| 1,000+ | ₹36.13 | ₹36,130.00 |
1 × ₹72.47
₹72.47
excl. GST
₹85.51 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
SPP21N10-VB
₹72.47 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 260pF
- Current - Continuous Drain(Id)
- 18A
- Ciss-Input Capacitance
- 1.3nF
- Pd - Power Dissipation
- 105W
- Reverse Transfer Capacitance (Crss)
- 110pF
- RDS(on)
- 127mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 28nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.3 g
Overview
AGM320M combines advanced trench MOSFET technology with low-resistance packaging to achieve ultra-low RDS(ON). This device is ideal for load switch and battery protection applications.
Applications
- Isolated DC/DC Converter
Key features
- Trench power MOSFET
- 175°C junction temperature
- Low thermal resistance package
- 100% gate resistance (Rg) tested
Alternatives
Similar parts — check the datasheet before substituting.
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