HXY MOSFET

SQ7415CENW-T1_GE3-HXY

25W 60V 20A 55mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs

DFN-8L(3x3)RoHSActive

Manufacturer: HXY MOSFET
Manufacturer part #: SQ7415CENW-T1_GE3-HXY
Store part #: C51949327
Package / case: DFN-8L(3x3)
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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78 in stock

#C51949327

Stock & price checked 3 days ago

Quantity	Unit price	Pack price
1+	₹76.24	₹76.24
10+	₹61.00	₹610.00
30+	₹54.56	₹1,636.80
100+	₹46.40	₹4,640.00
500+	₹42.96	₹21,480.00
1,000+	₹40.60	₹40,600.00

Quantity (min 1)

1 × ₹76.24

₹76.24

excl. GST

₹89.96 incl. 18% GST

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Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 5,000 per reel

SQ7415CENW-T1_GE3-HXY

₹76.24 for 1 + GST

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Specifications

Output Capacitance(Coss): 100pF
Ciss-Input Capacitance: 585pF
Pd - Power Dissipation: 25W
Drain to Source Voltage: 60V
Configuration: Standalone
Operating Temperature: -55℃~+150℃
Current - Continuous Drain(Id): 20A
Reverse Transfer Capacitance (Crss): 85pF
RDS(on): 55mΩ@10V
Number: 1 P-Channel
Gate Charge(Qg): 6.1nC@4.5V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 2.5V
Type: P-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 5,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.064 g

Overview

The SQ7415CENW-T1GE3 utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Applications

Battery Protection - Load Switch - Uninterruptible Power Supply

Key features

VDS = -60V, ID = -20A
RDS(ON) < 65mΩ at VGS = 4.5V

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Similar parts — check the datasheet before substituting.

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