SQJ138EP-T1_GE3

Automotive-grade N-channel 60 V (D-S), 175 °C MOSFET in PowerPAK 1212-8 delivers ultra-low thermal resistance in a small package, ideal for space-constrained applications. The PowerPAK 1212-8 package is a derivative of the PowerPAK SO-8. It employs the same packaging technology to maximize die area. The exposed die pad on the bottom provides a direct, low-resistance thermal path to the substrate on which the device is mounted. The PowerPAK 1212-8 footprint is comparable to TSOP-6. It is more than 40% smaller than the standard TSSOP-8. Its die capacity is more than twice that of the standard TSOP-6. Its thermal performance is an order of magnitude better than SO-8 and 20x better than TSSOP-8. It outperforms all existing SMT packages on the market in thermal performance. It fully utilizes the heat dissipation capability of the PCB. Compared to TSSOP-8, the reduced junction temperature also improves die efficiency by approximately 20%. For applications that would otherwise require a larger package solely due to thermal considerations, PowerPAK 1212-8 is an excellent choice. The single- and dual-channel PowerPAK 1212-8 pinouts are identical to those of the single- and dual-channel PowerPAK SO-8. With a PowerPAK height of only 1.05 mm, both versions are ideal for space-constrained applications.

Key features

• TrenchFET Gen IV power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Qgd/Qgs ratio < 1 optimizes switching characteristics