MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VISHAYDatasheet (PDF)
SQS180ELNW-T1_GE3
80V 82A 119W 8.3mΩ@4.5V 1 N-channel N-Channel PowerPAK1212-8SLW Single FETs, MOSFETs RoHS
PowerPAK1212-8SLWROHS3 CompliantActive
- Manufacturer
- VISHAY
- Manufacturer part #
- SQS180ELNW-T1_GE3
- Store part #
- C20346179
- Package / case
- PowerPAK1212-8SLW
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
88 in stock
#C20346179
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹240.23 | ₹240.23 |
| 10+ | ₹208.80 | ₹2,088.00 |
| 30+ | ₹191.68 | ₹5,750.40 |
| 100+ | ₹172.16 | ₹17,216.00 |
| 500+ | ₹163.48 | ₹81,740.00 |
| 1,000+ | ₹159.58 | ₹1,59,580.00 |
1 × ₹240.23
₹240.23
excl. GST
₹283.47 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
SQS180ELNW-T1_GE3
₹240.23 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 80V
- Output Capacitance(Coss)
- 360pF
- Current - Continuous Drain(Id)
- 82A
- Ciss-Input Capacitance
- 3.689nF
- Pd - Power Dissipation
- 119W
- Reverse Transfer Capacitance (Crss)
- 25pF
- RDS(on)
- 8.3mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 68nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.107 g
Overview
Key features
- TrenchFET 4th generation power MOSFET
- AEC-Q101 qualified
- 100% tested for Rg and UIS
- Solderable flank terminals
- 0.75mm profile, low thermal resistance
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Similar parts — check the datasheet before substituting.
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