Varnitronics
STB10NK60ZT4 ST
ST

STB10NK60ZT4

115W 600V 10A 750mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

TO-263-2ROHS3 CompliantActive

MOSFET N-CH 600V 10A TO-263-2

Manufacturer
ST
Manufacturer part #
STB10NK60ZT4
Store part #
C221475
Package / case
TO-263-2
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

15 in stock

#C221475

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹246.42₹246.42
10+₹209.26₹2,092.60
30+₹185.79₹5,573.70
100+₹161.90₹16,190.00
500+₹151.25₹75,625.00
1,000+₹146.47₹1,46,470.00

1 × ₹246.42

₹246.42

excl. GST

₹290.78 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

STB10NK60ZT4

₹246.42 for 1 + GST

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Specifications

Output Capacitance(Coss)
90pF
Ciss-Input Capacitance
1.37nF
Pd - Power Dissipation
115W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
600V
Current - Continuous Drain(Id)
10A
Reverse Transfer Capacitance (Crss)
50pF
RDS(on)
750mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
25nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
4.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.915 g

Overview

These devices are N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Applications

  • Switching applications

Key features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected

Alternatives

Similar parts — check the datasheet before substituting.

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