MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STB28N60DM2
170W 650V 21A 160mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS
D2PAKROHS3 CompliantActive
N-channel, Current:21A, Voltage:650V
- Manufacturer
- ST
- Manufacturer part #
- STB28N60DM2
- Store part #
- C2682599
- Package / case
- D2PAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C2682599
Stock & price checked 24 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,032.35 | ₹1,032.35 |
| 10+ | ₹1,017.96 | ₹10,179.60 |
| 30+ | ₹1,008.50 | ₹30,255.00 |
| 100+ | ₹998.83 | ₹99,883.00 |
1 × ₹1,032.35
₹1,032.35
excl. GST
₹1,218.17 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
STB28N60DM2
₹1,032.35 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 70pF
- Ciss-Input Capacitance
- 1.5nF
- Pd - Power Dissipation
- 170W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 21A
- Reverse Transfer Capacitance (Crss)
- 1.6pF
- RDS(on)
- 160mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 34nC@0V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.97 g
Overview
These high-voltage N-channel power MOSFETs belong to the MDmesh™ DM2 fast recovery diode series. They feature extremely low recovery charge (Qrr) and recovery time (trr), combined with low on-state resistance RDS(ON), making them suitable for converters demanding the highest efficiency and ideal for bridge topologies and zero voltage switching (ZVS) phase-shift converters.
Applications
- Switching applications
Key features
- Fast recovery body diode
- Ultra-low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt capability
- Zener protection
Alternatives
Similar parts — check the datasheet before substituting.
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