Varnitronics
STB30NF10T4 ST
ST

STB30NF10T4

115W 100V 35A 45mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS

TO-263-2ROHS3 CompliantActive
Manufacturer
ST
Manufacturer part #
STB30NF10T4
Store part #
C140377
Package / case
TO-263-2
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

352 in stock

#C140377

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹138.94₹138.94
10+₹114.12₹1,141.20
30+₹100.61₹3,018.30
100+₹85.37₹8,537.00
500+₹78.63₹39,315.00
1,000+₹75.57₹75,570.00

1 × ₹138.94

₹138.94

excl. GST

₹163.95 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

STB30NF10T4

₹138.94 for 1 + GST

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Specifications

Output Capacitance(Coss)
180pF
Ciss-Input Capacitance
1.18nF
Pd - Power Dissipation
115W
Operating Temperature
-55℃~+175℃
Drain to Source Voltage
100V
Current - Continuous Drain(Id)
35A
Reverse Transfer Capacitance (Crss)
80pF
RDS(on)
45mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
55nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
4V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.915 g

Overview

This Power MOSFET is the latest development of unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Applications

  • Switching application

Key features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Application oriented characterization

Alternatives

Similar parts — check the datasheet before substituting.

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