Varnitronics
STB33N60M2 ST
ST

STB33N60M2

190W 600V 26A 125mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

D2PAKROHS3 CompliantActive
Manufacturer
ST
Manufacturer part #
STB33N60M2
Store part #
C222359
Package / case
D2PAK
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

10 in stock

#C222359

Stock & price checked 4 days ago

QuantityUnit pricePack price
1+₹1,306.18₹1,306.18
10+₹1,288.77₹12,887.70
30+₹1,277.38₹38,321.40
100+₹1,265.78₹1,26,578.00

1 × ₹1,306.18

₹1,306.18

excl. GST

₹1,541.29 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

STB33N60M2

₹1,306.18 for 1 + GST

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Specifications

Output Capacitance(Coss)
85pF
Ciss-Input Capacitance
1.781nF
Pd - Power Dissipation
190W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
600V
Current - Continuous Drain(Id)
26A
Reverse Transfer Capacitance (Crss)
2.5pF
RDS(on)
125mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
45.5nC@10V
Vgs
±25V
Gate Threshold Voltage (Vgs(th))
4V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.94 g

Overview

This device is an N-channel power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and improved vertical structure, the device features low on-resistance and optimized switching characteristics, making it suitable for the most demanding high-efficiency converters.

Applications

  • Switching applications - LLC converters, resonant converters

Key features

  • Ultra-low gate charge
  • Excellent output capacitance (Coss) characteristics
  • 100% avalanche tested
  • Zener protection

Alternatives

Similar parts — check the datasheet before substituting.

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