MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STB45N50DM2AG
250W 500V 35A 84mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS
TO-263-3ROHS3 CompliantActive
Automotive-grade N-channel MOSFET, Current:35A, Voltage:500V
- Manufacturer
- ST
- Manufacturer part #
- STB45N50DM2AG
- Store part #
- C2969944
- Package / case
- TO-263-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C2969944
Stock & price checked 34 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,989.15 | ₹2,989.15 |
| 10+ | ₹2,932.83 | ₹29,328.30 |
1 × ₹2,989.15
₹2,989.15
excl. GST
₹3,527.20 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
STB45N50DM2AG
₹2,989.15 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 140pF
- Ciss-Input Capacitance
- 2.6nF
- Pd - Power Dissipation
- 250W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 500V
- Current - Continuous Drain(Id)
- 35A
- Reverse Transfer Capacitance (Crss)
- 2.4pF
- RDS(on)
- 84mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 57nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.467 g
Overview
This high-voltage N-channel power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It features ultralow recovery charge (Qrr) and recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shifted converters.
Applications
- Switching applications
Key features
- Designed for automotive applications, AEC-Q101 qualified
- Fast recovery body diode
- Ultra-low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
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