Varnitronics
STB80N20M5 ST
ST

STB80N20M5

200V 65A 190W 20mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

D2PAKROHS3 CompliantActive

MOSFET N-CH 200V 65A D2PAK

Manufacturer
ST
Manufacturer part #
STB80N20M5
Store part #
C2971202
Package / case
D2PAK
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

9 in stock

#C2971202

Stock & price checked 2 days ago

QuantityUnit pricePack price
1+₹944.54₹944.54
10+₹923.86₹9,238.60
30+₹910.16₹27,304.80
100+₹896.44₹89,644.00

1 × ₹944.54

₹944.54

excl. GST

₹1,114.56 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per reel

STB80N20M5

₹944.54 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
200V
Output Capacitance(Coss)
290pF
Current - Continuous Drain(Id)
65A
Ciss-Input Capacitance
4.08nF
Pd - Power Dissipation
190W
Reverse Transfer Capacitance (Crss)
50pF
RDS(on)
20mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
108nC@10V
Gate Threshold Voltage (Vgs(th))
4V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
1,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
2.07 g

Overview

These devices are N-channel power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products feature extremely low on-resistance, making them particularly suitable for applications requiring high power and outstanding efficiency.

Applications

  • Switching applications

Key features

  • Ultra-low RDS(ON)
  • Low gate charge and input capacitance
  • Excellent switching performance
  • 100% avalanche tested

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