MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD13NM60ND
N-Channel 600V 11A 109W Surface Mount DPAK
DPAKROHS3 CompliantActive
MOSFET N-CH 600V 11A DPAK
- Manufacturer
- ST
- Manufacturer part #
- STD13NM60ND
- Store part #
- C2970514
- Package / case
- DPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C2970514
Stock & price checked 14 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,005.76 | ₹1,005.76 |
| 10+ | ₹855.91 | ₹8,559.10 |
| 30+ | ₹764.68 | ₹22,940.40 |
| 100+ | ₹688.25 | ₹68,825.00 |
1 × ₹1,005.76
₹1,005.76
excl. GST
₹1,186.80 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
STD13NM60ND
₹1,005.76 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 47pF
- Ciss-Input Capacitance
- 845pF
- Pd - Power Dissipation
- 109W
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 11A
- Reverse Transfer Capacitance (Crss)
- 2.5pF
- RDS(on)
- 380mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 24.5nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.8 g
Overview
These FDmesh™ II power MOSFETs with intrinsic fast-recovery body diode are manufactured using second-generation MDmesh™ technology. These innovative devices feature a new strip layout vertical structure with extremely low on-resistance and excellent switching performance. They are ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Applications
- Switching applications
Key features
- Industry-leading RDS(on) × area product among fast recovery diode devices worldwide
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capability
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Similar parts — check the datasheet before substituting.
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