MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD18N60M6
110W 600V 13A 280mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS
DPAKROHS3 CompliantActive
N-channel, Current: 13A, Voltage: 600V
- Manufacturer
- ST
- Manufacturer part #
- STD18N60M6
- Store part #
- C2971243
- Package / case
- DPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C2971243
Stock & price checked 27 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹440.85 | ₹440.85 |
| 10+ | ₹434.18 | ₹4,341.80 |
| 30+ | ₹429.67 | ₹12,890.10 |
| 100+ | ₹425.37 | ₹42,537.00 |
1 × ₹440.85
₹440.85
excl. GST
₹520.20 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
STD18N60M6
₹440.85 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 45pF
- Ciss-Input Capacitance
- 650pF
- Pd - Power Dissipation
- 110W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 13A
- Reverse Transfer Capacitance (Crss)
- 2pF
- RDS(on)
- 280mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 16.8nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.83 g
Overview
The brand-new MDmesh M6 technology incorporates the latest technological advancements into the well-known and established SJ MOSFET MDmesh product family. Building on the previous generation of MDmesh devices, the new M6 technology combines excellent RDS(on) per unit area improvement with efficient switching performance, delivering maximum efficiency and ease of use for end applications.
Applications
- Switching Applications
- LLC Converter
- Boost PFC Converter
Key features
- Reduced switching losses
- Lower on-resistance per unit area (RDS(on)) vs. previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener diode protection
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