MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD2HNK60Z-1
N-Channel 600V 2A 45W Through Hole IPAK
IPAKROHS3 CompliantActive
MOSFET N-CH 600V 2A IPAK
- Manufacturer
- ST
- Manufacturer part #
- STD2HNK60Z-1
- Store part #
- C44206
- Package / case
- IPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
71 in stock
#C44206
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹173.41 | ₹173.41 |
| 10+ | ₹142.55 | ₹1,425.50 |
| 30+ | ₹125.38 | ₹3,761.40 |
| 100+ | ₹106.05 | ₹10,605.00 |
| 500+ | ₹97.57 | ₹48,785.00 |
| 1,000+ | ₹93.66 | ₹93,660.00 |
1 × ₹173.41
₹173.41
excl. GST
₹204.62 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 75 per tube
STD2HNK60Z-1
₹173.41 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 38pF
- Ciss-Input Capacitance
- 280pF
- Pd - Power Dissipation
- 45W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 2A
- Reverse Transfer Capacitance (Crss)
- 7pF
- RDS(on)
- 4.8Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 15nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 75 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.3 g
Overview
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Applications
- Switching applications
Key features
- Gate charge minimized
- 100% avalanche tested
- Extremely high dv/dt capability
- ESD improved capability
- New high voltage benchmark
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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