MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD4NK60Z-1
N-Channel 600V 4A 70W Through Hole IPAK
IPAKROHS3 CompliantActive
MOSFET N-CH 600V 4A IPAK
- Manufacturer
- ST
- Manufacturer part #
- STD4NK60Z-1
- Store part #
- C2844909
- Package / case
- IPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
18 in stock
#C2844909
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹157.34 | ₹157.34 |
| 10+ | ₹154.98 | ₹1,549.80 |
| 30+ | ₹153.26 | ₹4,597.80 |
| 75+ | ₹151.54 | ₹11,365.50 |
1 × ₹157.34
₹157.34
excl. GST
₹185.66 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 75 per tube
STD4NK60Z-1
₹157.34 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 67pF
- Ciss-Input Capacitance
- 510pF
- Pd - Power Dissipation
- 70W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 13pF
- RDS(on)
- 2Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 26nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 75 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.803 g
Overview
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Applications
- Switching applications
Key features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Zener-protected
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Similar parts — check the datasheet before substituting.
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