MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD4NK80ZT4
N-Channel 800V 3A 80W Surface Mount DPAK
DPAKROHS3 CompliantActive
MOSFET N-CH 800V 3A DPAK
- Manufacturer
- ST
- Manufacturer part #
- STD4NK80ZT4
- Store part #
- C457503
- Package / case
- DPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
257 in stock
#C457503
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹108.46 | ₹108.46 |
| 10+ | ₹86.68 | ₹866.80 |
| 30+ | ₹76.01 | ₹2,280.30 |
| 100+ | ₹65.12 | ₹6,512.00 |
| 500+ | ₹58.81 | ₹29,405.00 |
| 1,000+ | ₹55.33 | ₹55,330.00 |
1 × ₹108.46
₹108.46
excl. GST
₹127.98 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
STD4NK80ZT4
₹108.46 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 67pF
- Ciss-Input Capacitance
- 575pF
- Pd - Power Dissipation
- 80W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 3A
- Reverse Transfer Capacitance (Crss)
- 13pF
- RDS(on)
- 3.5Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 22.5nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.414 g
Overview
The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
Applications
- Switching application
Key features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatibility
Alternatives
Similar parts — check the datasheet before substituting.
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