MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STD65N160M9
N-Channel 650V 20A 106W Surface Mount DPAK
DPAKROHS3 CompliantActive
MOSFET N-CH 650V 20A DPAK
- Manufacturer
- ST
- Manufacturer part #
- STD65N160M9
- Store part #
- C5268775
- Package / case
- DPAK
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C5268775
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹428.64 | ₹428.64 |
| 10+ | ₹421.68 | ₹4,216.80 |
| 30+ | ₹416.89 | ₹12,506.70 |
| 100+ | ₹412.10 | ₹41,210.00 |
1 × ₹428.64
₹428.64
excl. GST
₹505.80 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
STD65N160M9
₹428.64 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 25pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 1.24nF
- Pd - Power Dissipation
- 106W
- RDS(on)
- 160mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 32nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.426 g
Overview
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Applications
- High efficiency switching applications
Key features
- Best-in-class figure of merit RDS(on)* Qg among silicon-based devices
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
- Zener protected
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