STH10N80K5-2AG

121W 800V 8A 680mΩ@10V 1 N-channel N-Channel H2PAK-2 Single FETs, MOSFETs RoHS

H2PAK-2ROHS3 CompliantActive

Automotive-grade N-channel 800 V, 0.60 Q typ., 8 A MDmesh K5 Power MOSFET

Manufacturer: ST
Manufacturer part #: STH10N80K5-2AG
Store part #: C3278110
Package / case: H2PAK-2
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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149 in stock

#C3278110

Stock & price checked 6 days ago

Quantity	Unit price	Pack price
1+	₹249.13	₹249.13
10+	₹228.67	₹2,286.70
30+	₹215.61	₹6,468.30
100+	₹202.31	₹20,231.00
500+	₹196.44	₹98,220.00
1,000+	₹193.82	₹1,93,820.00

Quantity (min 1)

1 × ₹249.13

₹249.13

excl. GST

₹293.97 incl. 18% GST

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Standard pack: 1,000 per reel

STH10N80K5-2AG

₹249.13 for 1 + GST

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Specifications

Output Capacitance(Coss): 41pF
Ciss-Input Capacitance: 426pF
Pd - Power Dissipation: 121W
Drain to Source Voltage: 800V
Operating Temperature: -55℃~+150℃
Current - Continuous Drain(Id): 8A
Reverse Transfer Capacitance (Crss): 1.2pF
RDS(on): 680mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 17.3nC@10V
Vgs: ±30V
Gate Threshold Voltage (Vgs(th)): 5V
Type: N-Channel

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 1.812 g

Overview

This ultra-high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a significantly reduced on-resistance combined with ultra-low gate charge, making it ideal for applications with demanding power density and efficiency requirements.