MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

650V 51A 266W 38mΩ@10V 1 N-channel N-Channel H2PAK-7 Single FETs, MOSFETs RoHS
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10 in stock
#C47146883
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,024.30 | ₹2,024.30 |
| 10+ | ₹1,997.43 | ₹19,974.30 |
| 30+ | ₹1,979.37 | ₹59,381.10 |
| 100+ | ₹1,961.53 | ₹1,96,153.00 |
1 × ₹2,024.30
₹2,024.30
excl. GST
₹2,388.67 incl. 18% GST
STH65N050DM9-7AG
₹2,024.30 for 1 + GST
This N-channel power MOSFET is based on the most innovative superjunction MDmesh DM9 technology for medium/high-voltage MOSFETs, featuring an extremely low on-resistance RDS(on) per unit area and an integrated fast-recovery diode. Silicon-based DM9 technology leverages a multi-drain manufacturing process to achieve a more optimized device structure. The fast-recovery diode offers ultra-low recovery charge Qrr, recovery time trr, and on-resistance RDS(on), making this fast-switching superjunction power MOSFET ideally suited for demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock