MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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VBsemi ElecDatasheet (PDF)
STI4N62K3-VB
530W 650V 4A 2.5Ω@10V 1 N-channel N-Channel TO-262 Single FETs, MOSFETs
TO-262RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- STI4N62K3-VB
- Store part #
- C52989042
- Package / case
- TO-262
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C52989042
Stock & price checked 2 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹87.08 | ₹87.08 |
| 10+ | ₹71.19 | ₹711.90 |
| 50+ | ₹63.13 | ₹3,156.50 |
| 100+ | ₹55.30 | ₹5,530.00 |
| 500+ | ₹48.77 | ₹24,385.00 |
| 1,000+ | ₹46.37 | ₹46,370.00 |
1 × ₹87.08
₹87.08
excl. GST
₹102.75 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
STI4N62K3-VB
₹87.08 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 960pF
- Ciss-Input Capacitance
- 1.1nF
- Pd - Power Dissipation
- 530W
- Configuration
- Standalone
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 4A
- Reverse Transfer Capacitance (Crss)
- 120pF
- RDS(on)
- 2.5Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 190nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply
- High-speed power switching
- Hard switching and high-frequency circuits
Key features
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Low on-resistance RDS(on)
- RoHS compliant with Directive 2002/95/EC
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