STLD200N4F6AG

40V 120A 158W 1.5mΩ@10V 1 N-channel N-Channel PowerFLAT(5x6) Single FETs, MOSFETs

PowerFLAT(5x6)RoHSActive

Manufacturer: ST
Manufacturer part #: STLD200N4F6AG
Store part #: C5271138
Package / case: PowerFLAT(5x6)
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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10 in stock

#C5271138

Stock & price checked 3 days ago

Quantity	Unit price	Pack price
1+	₹1,086.95	₹1,086.95
10+	₹1,071.68	₹10,716.80
30+	₹1,061.80	₹31,854.00
100+	₹1,051.69	₹1,05,169.00

Quantity (min 1)

1 × ₹1,086.95

₹1,086.95

excl. GST

₹1,282.60 incl. 18% GST

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Standard pack: 3,000 per reel

STLD200N4F6AG

₹1,086.95 for 1 + GST

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Specifications

Operating Temperature: -55℃~+175℃
Drain to Source Voltage: 40V
Output Capacitance(Coss): 1.53nF
Current - Continuous Drain(Id): 120A
Ciss-Input Capacitance: 10.7nF
Pd - Power Dissipation: 158W
Reverse Transfer Capacitance (Crss): 1.1nF
RDS(on): 1.5mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 172nC@32V
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 4V
Type: N-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 3,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.53 g

Overview

This device is an N-channel power MOSFET developed using STripFET F6 technology with a novel trench gate structure. The resulting power MOSFET exhibits extremely low on-resistance R<sub>DS(on)</sub> across all packages.

Applications

Switching applications

Key features

Designed specifically for automotive applications
Ultra-low on-resistance
Ultra-low gate charge
High avalanche ruggedness
Low gate drive power loss

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