MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
STDatasheet (PDF)
STO67N60DM6
240W 600V 58A 59mΩ@10V 1 N-channel N-Channel TO-LL Single FETs, MOSFETs RoHS
TO-LLROHS3 CompliantActive
N-channel, Current:58A, Voltage:600V
- Manufacturer
- ST
- Manufacturer part #
- STO67N60DM6
- Store part #
- C3281865
- Package / case
- TO-LL
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C3281865
Stock & price checked 44 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹3,247.07 | ₹3,247.07 |
| 10+ | ₹3,186.02 | ₹31,860.20 |
1 × ₹3,247.07
₹3,247.07
excl. GST
₹3,831.54 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,800 per reel
STO67N60DM6
₹3,247.07 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 280pF
- Ciss-Input Capacitance
- 3.4nF
- Pd - Power Dissipation
- 240W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 58A
- Reverse Transfer Capacitance (Crss)
- 2pF
- RDS(on)
- 59mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 72.5nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4.75V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
This high-voltage N-channel power MOSFET belongs to the MDmesh DM6 fast-recovery diode series. Compared to the previous generation MDmesh products, the DM6 combines extremely low recovery charge (Qrr) and recovery time (trr) with significantly reduced on-resistance per unit area (RDS(on)), delivering one of the most efficient switching performances on the market — ideal for bridge topologies and zero-voltage switching phase-shifted converters where efficiency is critical.
Applications
- Switching applications
Key features
- Fast recovery body diode
- Lower RDS(on) per unit area compared to previous generation
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protection
Alternatives
Similar parts — check the datasheet before substituting.
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