MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STP12NK80Z
N-Channel 800V 10.5A 190W Through Hole TO-220
TO-220ROHS3 CompliantActive
MOSFET N-CH 800V 10.5A TO-220
- Manufacturer
- ST
- Manufacturer part #
- STP12NK80Z
- Store part #
- C5887433
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
61 in stock
#C5887433
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹375.26 | ₹375.26 |
| 10+ | ₹314.72 | ₹3,147.20 |
| 50+ | ₹276.93 | ₹13,846.50 |
| 100+ | ₹238.09 | ₹23,809.00 |
| 500+ | ₹220.69 | ₹1,10,345.00 |
| 1,000+ | ₹212.96 | ₹2,12,960.00 |
1 × ₹375.26
₹375.26
excl. GST
₹442.81 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
STP12NK80Z
₹375.26 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 250pF
- Ciss-Input Capacitance
- 2.62nF
- Pd - Power Dissipation
- 190W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 800V
- Current - Continuous Drain(Id)
- 10.5A
- Reverse Transfer Capacitance (Crss)
- 53pF
- RDS(on)
- 750mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 87nC
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.853 g
Overview
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Applications
- Switching applications
Key features
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing reliability
Alternatives
Similar parts — check the datasheet before substituting.
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