MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
STDatasheet (PDF)
STP220N6F7
237W 60V 120A 2.4mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
TO-220-3ROHS3 CompliantActive
MOSFET N-CH 60V 120A TO-220-3
- Manufacturer
- ST
- Manufacturer part #
- STP220N6F7
- Store part #
- C2969794
- Package / case
- TO-220-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
111 in stock
#C2969794
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹448.54 | ₹448.54 |
| 10+ | ₹394.74 | ₹3,947.40 |
| 30+ | ₹361.13 | ₹10,833.90 |
| 100+ | ₹326.65 | ₹32,665.00 |
| 500+ | ₹311.02 | ₹1,55,510.00 |
| 1,000+ | ₹304.30 | ₹3,04,300.00 |
1 × ₹448.54
₹448.54
excl. GST
₹529.28 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
STP220N6F7
₹448.54 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 3.88nF
- Ciss-Input Capacitance
- 6.4nF
- Pd - Power Dissipation
- 237W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 175pF
- RDS(on)
- 2.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 100nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.934 g
Overview
This N-channel power MOSFET utilizes StripFET™ F7 technology, featuring an optimized trench gate structure that achieves ultra-low on-state resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operation.
Applications
- Switching applications
Key features
- Industry-leading low R<sub>DS(on)</sub>
- Excellent figure of merit (FoM)
- Low C<sub>rss</sub>/C<sub>iss</sub> ratio for EMI immunity
- High avalanche ruggedness
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