MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STP24N60DM2
N-Channel 650V 18A 150W Through Hole TO-220
TO-220ROHS3 CompliantActive
MOSFET N-CH 650V 18A TO-220
- Manufacturer
- ST
- Manufacturer part #
- STP24N60DM2
- Store part #
- C472620
- Package / case
- TO-220
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
39 in stock
#C472620
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹234.69 | ₹234.69 |
| 10+ | ₹198.83 | ₹1,988.30 |
| 30+ | ₹176.24 | ₹5,287.20 |
| 100+ | ₹153.20 | ₹15,320.00 |
| 500+ | ₹142.76 | ₹71,380.00 |
| 1,000+ | ₹138.21 | ₹1,38,210.00 |
1 × ₹234.69
₹234.69
excl. GST
₹276.93 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
STP24N60DM2
₹234.69 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 56pF
- Ciss-Input Capacitance
- 1.055nF
- Pd - Power Dissipation
- 150W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 18A
- Reverse Transfer Capacitance (Crss)
- 2.4pF
- RDS(on)
- 200mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 29nC@480V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.99 g
Overview
These FDmesh II Plus low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Applications
- Switching applications
Key features
- Extremely low gate charge and input capacitance
- Lower RDS(on) X area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt and avalanche capabilities
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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