MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
STDatasheet (PDF)
STP26N60DM6
130W 600V 18A 195mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
TO-220-3ROHS3 CompliantActive
N-channel, Current:18A, Voltage:600V
- Manufacturer
- ST
- Manufacturer part #
- STP26N60DM6
- Store part #
- C2969959
- Package / case
- TO-220-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C2969959
Stock & price checked 38 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,122.84 | ₹1,122.84 |
| 10+ | ₹1,106.29 | ₹11,062.90 |
| 30+ | ₹1,095.11 | ₹32,853.30 |
| 100+ | ₹1,084.16 | ₹1,08,416.00 |
1 × ₹1,122.84
₹1,122.84
excl. GST
₹1,324.95 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 350 per tube
STP26N60DM6
₹1,122.84 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 75pF
- Ciss-Input Capacitance
- 940pF
- Pd - Power Dissipation
- 130W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 18A
- Reverse Transfer Capacitance (Crss)
- 4pF
- RDS(on)
- 195mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 24nC@10V
- Vgs
- ±25V
- Gate Threshold Voltage (Vgs(th))
- 4.75V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 350 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 4.6 g
Overview
This high-voltage N-channel power MOSFET belongs to the MDmesh DM6 fast-recovery diode series. Compared to the previous generation MDmesh fast-recovery diodes, the DM6 combines extremely low recovery charge (Qrr) and recovery time (trr) with significantly improved RDS(ON) per unit area, delivering one of the most effective switching performances on the market for demanding high-efficiency bridge topologies and ZVS phase-shifted converters.
Applications
- Switching applications
Key features
- Fast recovery body diode
- Lower RDS(ON) per unit area compared to previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Alternatives
Similar parts — check the datasheet before substituting.
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