MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
STDatasheet (PDF)
STW65N023M9-4
N-Channel 650V 95A 463W Through Hole TO-247-4
TO-247-4ROHS3 CompliantActive
MOSFET N-CH 650V 95A TO-247-4
- Manufacturer
- ST
- Manufacturer part #
- STW65N023M9-4
- Store part #
- C20033906
- Package / case
- TO-247-4
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C20033906
Stock & price checked 35 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹3,616.98 | ₹3,616.98 |
| 10+ | ₹3,531.87 | ₹35,318.70 |
1 × ₹3,616.98
₹3,616.98
excl. GST
₹4,268.04 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
STW65N023M9-4
₹3,616.98 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 95A
- Output Capacitance(Coss)
- 140pF
- Ciss-Input Capacitance
- 8.844nF
- Pd - Power Dissipation
- 463W
- RDS(on)
- 23mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 230nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4.2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 9.467 g
Overview
This N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, designed for medium/high-voltage MOSFETs with extremely low on-resistance RDS(on) per unit area. The silicon-based M9 technology leverages a multi-drain manufacturing process to optimize the device structure. Among all silicon-based fast-switching super-junction power MOSFETs, this product offers low on-resistance and small gate charge values, making it particularly well-suited for applications with demanding power density and efficiency requirements.
Applications
- High-efficiency switching applications
Key features
- Best-in-class RDS(on)*Qg figure of merit among silicon-based devices
- Higher VDSS rating
- Higher dv/dt capability
- Superior switching performance via additional gate source pin
- Easy to drive
- 100% avalanche tested
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | HSCM0020065K#C49823493Huixin · TO-247-4L | Huixin | TO-247-4L | 20 | ₹2,520.73 · 20 in stock | View |
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