MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
STDatasheet (PDF)
STWA68N65DM6
650V 55A 431W Through Hole TO-247
TO-247ROHS3 CompliantActive
MOSFET 650V 55A TO-247
- Manufacturer
- ST
- Manufacturer part #
- STWA68N65DM6
- Store part #
- C5268691
- Package / case
- TO-247
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C5268691
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹2,238.58 | ₹2,238.58 |
| 10+ | ₹2,195.16 | ₹21,951.60 |
1 × ₹2,238.58
₹2,238.58
excl. GST
₹2,641.52 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
STWA68N65DM6
₹2,238.58 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 258pF
- Current - Continuous Drain(Id)
- 55A
- Ciss-Input Capacitance
- 3.528nF
- Pd - Power Dissipation
- 431W
- Reverse Transfer Capacitance (Crss)
- 1.5pF
- RDS(on)
- 59mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 80nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1 g
Overview
This high-voltage N-channel power MOSFET belongs to the MDmesh DM6 fast recovery diode series. Compared to the previous generation MDmesh fast recovery diodes, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with significantly reduced on-resistance (RDS(on)) per unit area, while delivering one of the most efficient switching characteristics for the most demanding high-efficiency bridge topologies and zero voltage switching (ZVS) phase-shift converters on the market.
Applications
- Switching applications
Key features
- Fast recovery body diode
- Lower RDS(on) per unit area compared to previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt immunity
- Zener diode protection
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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