Varnitronics
SUD45P03-10-E3 JSMSEMI
JSMSEMI

SUD45P03-10-E3

P-Channel 30V 50A 75W Surface Mount TO-252

TO-252ROHS CompliantActive

MOSFET P-CH 30V 50A TO-252

Manufacturer
JSMSEMI
Manufacturer part #
SUD45P03-10-E3
Store part #
C7436406
Package / case
TO-252
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

1,842 in stock

#C7436406

Stock & price checked 8 days ago

QuantityUnit pricePack price
1+₹43.63₹43.63
10+₹37.98₹379.80
30+₹35.60₹1,068.00
100+₹32.78₹3,278.00
500+₹31.47₹15,735.00
1,000+₹30.60₹30,600.00

1 × ₹43.63

₹43.63

excl. GST

₹51.48 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

SUD45P03-10-E3

₹43.63 for 1 + GST

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Specifications

Operating Temperature
-55℃~+175℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
50A
Ciss-Input Capacitance
2.35nF
Pd - Power Dissipation
75W
Reverse Transfer Capacitance (Crss)
285pF
RDS(on)
14mΩ@10V
Number
1 P-Channel
Gate Charge(Qg)
40nC@10V
Gate Threshold Voltage (Vgs(th))
1.6V

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.373 g

Overview

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Applications

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Key features

  • VDS=-30V, ID=-50A, RDS(ON)<14mΩ@VGS=-10V
  • Low gate charge.
  • Green device available.
  • Advanced high cell denity trench technology for ultra low RDS(ON).
  • Excellent package for good heat dissipation.

Alternatives

Similar parts — check the datasheet before substituting.

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AOD403#C6396161JSMSEMI · TO-252₹37.67 · 4,065 in stockView
AOD4185-JSM#C18189874JSMSEMI · TO-252₹47.96 · 2,150 in stockView
JSM60P50K#C18191942JSMSEMI · TO-252₹54.76 · 778 in stockView
AOD425-JSM#C18190378JSMSEMI · TO-252₹57.76 · 0 in stockView

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