MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
SUD50N10-18P-GE3-HXY
100V 60A 67.5W 13.5mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- SUD50N10-18P-GE3-HXY
- Store part #
- C54582606
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
47 in stock
#C54582606
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹108.76 | ₹108.76 |
| 10+ | ₹89.21 | ₹892.10 |
| 30+ | ₹79.54 | ₹2,386.20 |
| 100+ | ₹69.85 | ₹6,985.00 |
| 500+ | ₹57.18 | ₹28,590.00 |
| 1,000+ | ₹54.16 | ₹54,160.00 |
1 × ₹108.76
₹108.76
excl. GST
₹128.34 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
SUD50N10-18P-GE3-HXY
₹108.76 for 1 + GST
Specifications
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 60A
- Output Capacitance(Coss)
- 144pF
- Ciss-Input Capacitance
- 1.208nF
- Pd - Power Dissipation
- 67.5W
- Reverse Transfer Capacitance (Crss)
- 11.3pF
- RDS(on)
- 13.5mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 22.7nC@10V
- Gate Threshold Voltage (Vgs(th))
- 1.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.4 g
Overview
SUD50N10-18P-GE3 utilizes advanced SGT MOSFET technology, delivering low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced ruggedness. Package: TO-252-2L.
Applications
- Consumer electronics power supplies, motor control, synchronous rectification, isolated DC synchronous rectification applications
Key features
- Drain-Source Voltage (VDS) = 100V, Drain Current (ID) = 60A
- On-Resistance (RDS(ON)) < 17mΩ at VGS = 10V
- Pin 3: Source (S)
- N-Channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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