TOSHIBA

TK12E60W,S1VX(S

N-Channel 600V Through Hole TO-220-3

TO-220-3RoHSActive

MOSFET N-CH 600V TO-220-3

Manufacturer: TOSHIBA
Manufacturer part #: TK12E60W,S1VX(S
Store part #: C5374700
Package / case: TO-220-3
Category: Single FETs, MOSFETs
Packaging: Tube-packed

Datasheet (PDF)

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133 in stock

#C5374700

Stock & price checked 4 days ago

Quantity	Unit price	Pack price
1+	₹168.62	₹168.62
10+	₹140.98	₹1,409.80
50+	₹125.65	₹6,282.50
100+	₹108.59	₹10,859.00
500+	₹101.04	₹50,520.00
1,000+	₹97.58	₹97,580.00

Quantity (min 1)

1 × ₹168.62

₹168.62

excl. GST

₹198.97 incl. 18% GST

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Standard pack: 50 per tube

TK12E60W,S1VX(S

₹168.62 for 1 + GST

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Specifications

Output Capacitance(Coss): 23pF
Ciss-Input Capacitance: 890pF
Pd - Power Dissipation: 110W
Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 600V
Current - Continuous Drain(Id): 11.5A
Reverse Transfer Capacitance (Crss): 2.8pF
RDS(on): 265mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 25nC@10V
Vgs: ±30V
Gate Threshold Voltage (Vgs(th)): 3.7V
Type: N-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
ECCN: EAR99
Packaging: Tube-packed
Standard pack: 50 / Tube
Sold per: Piece
Minimum order: 1
Unit weight: 2.68 g

Overview

This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Applications

Switching Voltage Regulators

Key features

Low drain-source on-resistance: RDS(ON)=0.265 Ω (typ.) by used to Super Junction Structure: DTMOS
Easy to control Gate switching
Enhancement mode: Vth=2.7 to 3.7 V (ΔVDS=10 V, ID=0.6 mA)

Alternatives

Similar parts — check the datasheet before substituting.

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