MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
TOSHIBADatasheet (PDF)
TK25A20D,S5X
45W 200V 25A 70mΩ@10V 1 N-channel N-Channel ITO-220S-3 Single FETs, MOSFETs RoHS
ITO-220S-3ROHS3 CompliantActive
MOSFET N-CH 200V 25A ITO-220S-3
- Manufacturer
- TOSHIBA
- Manufacturer part #
- TK25A20D,S5X
- Store part #
- C2990812
- Package / case
- ITO-220S-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
479 in stock
#C2990812
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹113.21 | ₹113.21 |
| 10+ | ₹101.88 | ₹1,018.80 |
| 50+ | ₹95.57 | ₹4,778.50 |
| 100+ | ₹88.60 | ₹8,860.00 |
| 500+ | ₹85.35 | ₹42,675.00 |
| 1,000+ | ₹83.81 | ₹83,810.00 |
1 × ₹113.21
₹113.21
excl. GST
₹133.59 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
TK25A20D,S5X
₹113.21 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 180pF
- Ciss-Input Capacitance
- 2.55nF
- Pd - Power Dissipation
- 45W
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 25A
- Reverse Transfer Capacitance (Crss)
- 21pF
- RDS(on)
- 70mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.43 g
Overview
GL25N40A8 is a silicon N-channel enhancement-mode VDMOSFET utilizing self-aligned planar technology, which reduces conduction losses, improves switching performance, and enhances avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220 package, RoHS compliant.
Applications
- Switching regulator
Key features
- Low drain-source on-resistance: RDS(ON) = 0.047 Ω (typ.)
- Low leakage current: IDSS = 10 μA (max.) (VDS = 200 V)
- Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Alternatives
Similar parts — check the datasheet before substituting.
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