MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
TOSHIBADatasheet (PDF)
TK8A65D(STA4,Q,M)
N-Channel 650V 8A 45W Through Hole TO-220SIS
TO-220SISROHS3 CompliantActive
MOSFET N-CH 650V 8A TO-220SIS
- Manufacturer
- TOSHIBA
- Manufacturer part #
- TK8A65D(STA4,Q,M)
- Store part #
- C2990817
- Package / case
- TO-220SIS
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
402 in stock
#C2990817
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹94.49 | ₹94.49 |
| 10+ | ₹75.54 | ₹755.40 |
| 50+ | ₹65.96 | ₹3,298.00 |
| 100+ | ₹56.61 | ₹5,661.00 |
| 500+ | ₹51.16 | ₹25,580.00 |
| 1,000+ | ₹48.12 | ₹48,120.00 |
1 × ₹94.49
₹94.49
excl. GST
₹111.50 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
TK8A65D(STA4,Q,M)
₹94.49 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 135pF
- Ciss-Input Capacitance
- 1.35nF
- Pd - Power Dissipation
- 45W
- Drain to Source Voltage
- 650V
- Current - Continuous Drain(Id)
- 8A
- Reverse Transfer Capacitance (Crss)
- 6pF
- RDS(on)
- 840mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 25nC@10V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.5 g
Overview
Super-junction power MOSFETs are a breakthrough technology for high-voltage power MOSFETs, designed based on the super-junction (SJ) principle. Deep-trench super-junction MOSFETs are devices featuring ultra-low switching, commutation, and conduction losses. Their exceptional robustness makes resonant switching applications particularly reliable, efficient, compact, and thermally optimized.
Applications
- Switching regulator applications
Key features
- Low drain-source on-resistance: RDS(ON) = 0.7Ω (typ.)
- High forward transfer admittance: |Yfs| = 4.5 S (typ.)
- Low leakage current: IDSS = 10\mu A (max.) (VDS = 650V)
- Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | TK8A65D(STA4,X,M)#C2929219TOSHIBA · ITO-220S-3 | TOSHIBA | ITO-220S-3 | 422 | ₹85.78 · 422 in stock | View |
 | TK17A80W,S4X#C5381071TOSHIBA · TO-220SIS | TOSHIBA | TO-220SIS | 1,695 | ₹175.47 · 1,695 in stock | View |
 | TK17A65W,S5X(M#C5307665TOSHIBA · TO-220SIS | TOSHIBA | TO-220SIS | 13 | ₹278.35 · 13 in stock | View |
 | TK10A80E,S4X(S#C5379814TOSHIBA · TO-220SIS | TOSHIBA | TO-220SIS | 52,558 | ₹120.39 · 52,558 in stock | View |
 | TK750A60F,S4X#C516179TOSHIBA · TO-220SIS | TOSHIBA | TO-220SIS | On request | ₹91.50 · 0 in stock | View |
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