MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

P-Channel 400V 1.1A 1.6W Surface Mount SOT-89
MOSFET P-CH 400V 1.1A SOT-89
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100% Authentic · 30-Day Return or Replacement · policy
11 in stock
#C629209
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹446.43 | ₹446.43 |
| 10+ | ₹438.48 | ₹4,384.80 |
| 30+ | ₹433.32 | ₹12,999.60 |
| 100+ | ₹428.16 | ₹42,816.00 |
1 × ₹446.43
₹446.43
excl. GST
₹526.79 incl. 18% GST
TP2540N8-G
₹446.43 for 1 + GST
The TP2540 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock