MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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RENESASDatasheet (PDF)
TP65H030G4PQS-TR
650V 55.7A 192W 30mΩ 1 N-channel N-Channel TOLL Single FETs, MOSFETs
TOLLRoHSActive
- Manufacturer
- RENESAS
- Manufacturer part #
- TP65H030G4PQS-TR
- Store part #
- C46642671
- Package / case
- TOLL
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C46642671
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,878.26 | ₹1,878.26 |
| 10+ | ₹1,821.68 | ₹18,216.80 |
1 × ₹1,878.26
₹1,878.26
excl. GST
₹2,216.35 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
TP65H030G4PQS-TR
₹1,878.26 for 1 + GST
Specifications
- Drain to Source Voltage
- 650V
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 127pF
- Current - Continuous Drain(Id)
- 55.7A
- Ciss-Input Capacitance
- 1500pF
- Technology
- D-mode
- Pd - Power Dissipation
- 192W
- Reverse Transfer Capacitance (Crss)
- 4.6pF
- RDS(on)
- 30mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 24.5nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.91 g
Overview
TP65H030G4PQS is a 650V, 30mΩ GaN FET in a normally-off configuration, based on Renesas Electronics' 4th-generation enhancement-mode SuperGaN® platform. The device integrates an advanced high-voltage GaN HEMT with a low-voltage silicon MOSFET, delivering superior performance, standard gate-driver compatibility, ease of adoption, and high reliability. The 4th-generation enhancement-mode SuperGaN® platform employs advanced epitaxial techniques and patented design innovations to simplify manufacturability, while achieving efficiency improvements over silicon devices through reduced gate charge, output capacitance, crossover losses, and reverse recovery charge.
Applications
- AI data center and telecom power supplies
- Electric vehicle charging
- Photovoltaic inverters
- Uninterruptible power supplies
- Battery energy storage systems
Key features
- 4th generation enhancement-mode GaN technology for ultra-fast switching
- JEDEC-compliant GaN technology
- Dynamic on-resistance tested in production
- Reduced crossover losses
- Negligible reverse recovery charge
- RoHS-compliant and halogen-free package
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