Varnitronics
TPRCLAMP3654PATCT TECH PUBLIC
TECH PUBLIC

TPRCLAMP3654PATCT

30VC Clamp 3A@8/20us 4A@8/20us Ipp TVS DIODE DFN1616-6

DFN1616-6RoHSActive

TVS DIODE 5.5VWM 30VC DFN1616-6

Manufacturer
TECH PUBLIC
Manufacturer part #
TPRCLAMP3654PATCT
Store part #
C19829508
Package / case
DFN1616-6
Category
TVS Diodes
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

3,215 in stock

#C19829508

Stock & price checked 12 days ago

QuantityUnit pricePack price
5+₹20.47₹102.35
50+₹18.18₹909.00
150+₹17.20₹2,580.00
500+₹15.98₹7,990.00
3,000+₹13.83₹41,490.00
6,000+₹13.51₹81,060.00

5 × ₹20.47

₹102.35

excl. GST

₹120.77 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

TPRCLAMP3654PATCT

₹102.35 for 5 + GST

Need this with the rest of your board? Upload the BOM — we price every line.Upload BOM

Specifications

Clamping Voltage
30V
Operating Temperature
-55℃~+125℃
Peak Pulse Current (Ipp)
3A@8/20us;4A@8/20us
Peak Pulse Power Dissipation (Ppp)
100W@8/20us;350W@8/20us
Number of Channels
Three channels
Voltage - Breakdown
8V
type
TVS
Polarity
Unidirectional
Reverse Leakage Current (Ir)
1uA
Reverse Stand-Off Voltage (Vrwm)
5.5V

Packaging & compliance

RoHS
RoHS
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.051 g

Overview

Applications

  • USB2.0 USBOTG
  • SD Card Interfaces
  • SIM Ports
  • MDDI Ports
  • MPPI Ports

Key features

  • Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) ±25kV (air), ±8kV (contact)
  • IEC61000-4-4 (EFT) 40A (5/50ns)
  • Array of surge rated diodes with internal Tvs Diode
  • Small package (1.6×1.6mm) saves board space
  • Protects USB DP, DM, and ID Pin operating up to 5.5V
  • Protects USB VBus operating up to 28V
  • Low capacitance (<1pF) on DP, DM, and ID Pins
  • No insertion loss to 2.0GHz
  • Low leakage current
  • Low clamping voltage
  • Large ground pad for increased ESD performance
  • Solid-state silicon-avalanche technology

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